MAX11014BGTM+T【PDF 34/70 页】IC RF MESFET AMP 48-TQFN-EP

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Automatic RF MESFET Amplifier

Drain-Current Controllers

Table 6. IH1 and IH2 (Read/Write)

BIT

RESET

STATE

BIT VALUE

D15

X

X

D14

X

X

D13

X

X

D12

X

X

D11

1

MSB

D10

1

—

D9

1

—

D8

1

—

D7

1

—

D6

1

—

D5

1

—

D4

1

—

D3

1

—

D2

1

—

D1

1

—

D0

1

LSB

X = Don’t care.

Table 7. IL1 and IL2 (Read/Write)

BIT

RESET

STATE

BIT VALUE

D15

X

X

D14

X

X

D13

X

X

D12

X

X

D11

0

MSB

D10

0

—

D9

0

—

D8

0

—

D7

0

—

D6

0

—

D5

0

—

D4

0

—

D3

0

—

D2

0

—

D1

0

—

D0

0

LSB

X = Don’t care.

Table 8. VH1 and VH2 (Read/Write)

BIT

RESET

STATE

BIT VALUE

D15

X

X

D14

X

X

D13

X

X

D12

X

X

D11

1

MSB

D10

1

—

D9

1

—

D8

1

—

D7

1

—

D6

1

—

D5

1

—

D4

1

—

D3

1

—

D2

1

—

D1

1

—

D0

1

LSB

X = Don’t care.

Following the command byte, read 12 bits of data from

bits D11–D0. Bits D15–D12 are don’t care. Sense volt-

age data must be written and read in straight binary

format. See Table 6. The POR value of the high sense

voltage ALARM threshold registers is 1111 1111 1111.

See Figures 25 and 27 for ALARM examples.

The sense voltage is measured between RCS_+ and

RCS_-. A reading of 1111 1111 1111 corresponds to

V REFDAC / 4. A reading of 0000 0000 0000 corre-

sponds to 0mV.

IL1 and IL2 (Read/Write)

Set the channel 1 and channel 2 low sense voltage

ALARM thresholds by writing command bytes 26h and

32h, respectively. Following the command byte, write

12 bits of data to bits D11–D0. Read the low sense volt-

age channel 1 and channel 2 ALARM thresholds by

writing command bytes A6h and B2h, respectively.

Following the command byte, read 12 bits of data from

bits D11–D0. Bits D15–D12 are don’t care. Sense volt-

age data must be written and read in straight binary

format. See Table 7. The POR value of the low sense

voltage ALARM threshold registers is 0000 0000 0000.

See Figures 25 and 27 for ALARM examples.

The sense voltage is measured between RCS_+ and

RCS_-. A reading of 1111 1111 1111 corresponds to

V REFDAC / 4. A reading of 0000 0000 0000 corre-

sponds to 0mV.

VH1 and VH2 (Read/Write)

Set the channel 1 and channel 2 high GATE voltage

ALARM thresholds by writing command bytes 28h and

34h, respectively. Following the command byte, write

12 bits of data to bits D11–D0. Read the high GATE

voltage channel 1 and channel 2 ALARM thresholds by

writing command bytes A8h and B4h, respectively.

Following the command byte, read 12 bits of data from

bits D11–D0. Bits D15–D12 are don’t care. Voltage data

must be written and read in straight binary format. See

Table 8. The POR value of the high GATE voltage

ALARM threshold registers is 1111 1111 1111. See

Figure 7 for a GATE voltage example. See Figures 25

and 27 for ALARM examples.

VL1 and VL2 (Read/Write)

Set the channel 1 and channel 2 low GATE voltage

ALARM thresholds by writing command bytes 2Ah and

36h, respectively. Following the command byte, write

12 bits of data to bits D11–D0. Read the low GATE volt-

age channel 1 and channel 2 ALARM thresholds by

writing command bytes AAh and B6h, respectively.

Following the command byte, read 12 bits of data from

bits D11–D0. Bits D15–D12 are don’t care. Voltage data

must be written and read in straight binary format. See

Table 9. The POR value of the low GATE voltage

ALARM threshold registers is 0000 0000 0000. See

Figure 7 for a GATE voltage example. See Figures 25

and 27 for ALARM examples.

34

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